Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D 2 -O 2  Mixture

A. E. Gorodetsky; R. Kh. Zalavutdinov; V. L. Bukhovets; A. V. Markin; A. P. Zakharov; V. I. Zolotarevsky; V. L. Voytitsky; T. V. Rybkina; L. P. Kazansky; I. A. Arkhipushkin; E. E. Mukhin; A. G. Razdobarin

doi:10.1134/S1027451017060283

Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D₂-O₂ Mixture

作者: Gorodetsky A.E.¹, Zalavutdinov R.K.¹, Bukhovets V.L.¹, Markin A.V.¹, Zakharov A.P.¹, Zolotarevsky V.I.¹, Voytitsky V.L.¹, Rybkina T.V.¹, Kazansky L.P.¹, Arkhipushkin I.A.¹, Mukhin E.E.², Razdobarin A.G.²
隶属关系:
1. Frumkin Institute of Physical Chemistry and Electrochemistry
2. Ioffe Physical-Technical Institute
期: 卷 11, 编号 6 (2017)
页面: 1196-1207
栏目: Article
URL: https://journals.rcsi.science/1027-4510/article/view/194469
DOI: https://doi.org/10.1134/S1027451017060283
ID: 194469

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A technique for tungsten-film deposition on different substrates in asymmetrical high-frequency (1.76 MHz) capacitive discharge in a D₂−6.5 mol % O₂ mixture under a total pressure of 15 Pa and at 60–130°C is considered. A circular W strip near the upper inner edge of a cylindrical hollow cathode with a radius of 4.2 cm and a height of 10 cm is the source of W particles. The smooth transition from sputtering of the inner surface to deposition occurs at a distance of about 4 cm from the upper boundary of the open part of the cathode. W, Mo, ZrO₂, Si, and Cu substrates are placed in the lower closed end (bottom) and on the inner lateral cathode surface. At the upper cathode edge the sputtering yield is (4–5) × 10⁻² at/ion. The mass rate of W deposition on the cathode bottom does not depend on the substrate type and is 40 μg/(cm² h). The peculiarities of the composition, morphology, and structure of W films obtained on the lateral surface and bottom of the hollow cathode are discussed.

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tungsten, films, high-frequency discharge, deuterium, oxygen, substrates, molybdenum, zirconium oxide, silicon, copper

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Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D₂-O₂ Mixture

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详细

关键词

作者简介

A. Gorodetsky

R. Zalavutdinov

V. Bukhovets

A. Markin

A. Zakharov

V. Zolotarevsky

V. Voytitsky

T. Rybkina

L. Kazansky

I. Arkhipushkin

E. Mukhin

A. Razdobarin

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Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D2-O2 Mixture

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Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D₂-O₂ Mixture