Enviar artigo por via de e-mail Formation of Films of Tungsten and its Oxides in a High-Frequency Capacitive Discharge in a D2-O2 Mixture
- Autores: Gorodetsky A.E.1, Zalavutdinov R.K.1, Bukhovets V.L.1, Markin A.V.1, Zakharov A.P.1, Zolotarevsky V.I.1, Voytitsky V.L.1, Rybkina T.V.1, Kazansky L.P.1, Arkhipushkin I.A.1, Mukhin E.E.2, Razdobarin A.G.2
-
Afiliações:
- Frumkin Institute of Physical Chemistry and Electrochemistry
- Ioffe Physical-Technical Institute
- Edição: Volume 11, Nº 6 (2017)
- Páginas: 1196-1207
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/194469
- DOI: https://doi.org/10.1134/S1027451017060283
- ID: 194469
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
A technique for tungsten-film deposition on different substrates in asymmetrical high-frequency (1.76 MHz) capacitive discharge in a D2−6.5 mol % O2 mixture under a total pressure of 15 Pa and at 60–130°C is considered. A circular W strip near the upper inner edge of a cylindrical hollow cathode with a radius of 4.2 cm and a height of 10 cm is the source of W particles. The smooth transition from sputtering of the inner surface to deposition occurs at a distance of about 4 cm from the upper boundary of the open part of the cathode. W, Mo, ZrO2, Si, and Cu substrates are placed in the lower closed end (bottom) and on the inner lateral cathode surface. At the upper cathode edge the sputtering yield is (4–5) × 10−2 at/ion. The mass rate of W deposition on the cathode bottom does not depend on the substrate type and is 40 μg/(cm2 h). The peculiarities of the composition, morphology, and structure of W films obtained on the lateral surface and bottom of the hollow cathode are discussed.
Palavras-chave
Sobre autores
A. Gorodetsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Autor responsável pela correspondência
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
R. Zalavutdinov
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
V. Bukhovets
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
A. Markin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
A. Zakharov
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
V. Zolotarevsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
V. Voytitsky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
T. Rybkina
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
L. Kazansky
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
I. Arkhipushkin
Frumkin Institute of Physical Chemistry and Electrochemistry
Email: aegorodetsky@mail.ru
Rússia, Moscow, 119071
E. Mukhin
Ioffe Physical-Technical Institute
Email: aegorodetsky@mail.ru
Rússia, St. Petersburg, 194021
A. Razdobarin
Ioffe Physical-Technical Institute
Email: aegorodetsky@mail.ru
Rússia, St. Petersburg, 194021
Arquivos suplementares
