Interconnects Materials for Integrated Circuit Technology Below 5 Nm Node

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Resumo

As the integrated circuits is scaled few problems appear at the lowest levels of interconnects — high resistance of copper lines and copper electromigration. High resistance is connected with the increasing contribution of the electron surface scattering and grain boundary scattering. Moreover, copper lines require barrier layers decreasing the cross-section of the copper part of the line. Also the resistance of copper to electromigration is insufficient for the technology node below 5nm. Therefore, it is necessary to look for alternative materials to replace copper, which will provide high resistance to electromigration and low resistance of the lines. The most promising candidates are Ru, Mo, Rh, Ir. The advantages and disadvantages of these materials are considered in this paper.

Sobre autores

A. Rogozhin

Valiev Institute of Physics and Technology of Russian Academy of Sciences

Email: glaz@ftian.ru
Rússia, Moscow

O. Glaz

Valiev Institute of Physics and Technology of Russian Academy of Sciences; MPEI National Research University

Autor responsável pela correspondência
Email: glaz@ftian.ru
Rússia, Moscow; Moscow

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2. Fig. 1. TFVL process

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3. Fig. 2. TFVL process

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4. Fig. 3. Intersection of two tracks

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5. Fig. 4. Dependence of relative dielectric permittivity on porosity

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6. Fig. 5. Surface electron scattering (a) can be elastic and diffuse. Elastic scattering requires (b) an atomically smooth surface and a dielectric inoculum with a low density of localized states (c)

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7. Fig. 6. Electron reflection coefficient from the boundary (a), grain boundary with coincident lattice nodes (b), with space charge (c) and with space charge compensation (d)

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8. Fig. 7. Resistivity ρ of polycrystalline tracks with square cross-section as a function of their width d

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9. Fig. 8. Resistivity of tracks with a cross-sectional aspect ratio of 2 : 1 from their width with and without a seed layer (2 nm)

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10. Fig. 9. Melting point and corresponding product ρ0λ for different metals

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