Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures

V. M. Mordvintsev; Мордвинцев В. М.; S. E. Kudryavtsev; Кудрявцев С. Е.; V. V. Naumov; Наумов В. В.; E. S. Gorlachev; Горлачев Е. С.

doi:10.31857/S0544126923700515

Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures

Авторлар: Mordvintsev V.¹, Kudryavtsev S.¹, Naumov V.¹, Gorlachev E.¹
Мекемелер:
1. Valiev Institute of Physics and Technology, Yaroslavl Branch, Russian Academy of Sciences
Шығарылым: Том 52, № 5 (2023)
Беттер: 431-440
Бөлім: ТЕХНОЛОГИИ
URL: https://journals.rcsi.science/0544-1269/article/view/138579
DOI: https://doi.org/10.31857/S0544126923700515
EDN: https://elibrary.ru/PZYPSZ
ID: 138579

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Аннотация

Memristors (elements of nonvolatile electrically reprogrammable memory) based on electro-formed open sandwich-metal-dielectric-metal (MDM) structures are fabricated using thin-film technology. Studies of the electroforming process and the features of the current-voltage characteristics (CVCs) after it was carried out for structures with various electrode materials showed that in the case of a tungsten anode, it was possible to minimize the probability of electrical breakdown during electroforming and subsequent oper-ation of the memory elements. This is valid for any position of the anode in the MDM structure: both upper and lower. However, it is experimentally shown that tungsten is not the optimal material. The production of the anode from molybdenum retains all the advantages of the design with tungsten, and in addition, it leads to a noticeable decrease in the electroforming voltage, which can increase the reliability of this process. The results obtained can be used to optimize the design of the memory element.

Негізгі сөздер

memristor, memory element, MDM structures, electrode material, electroformation, conducting medium, conducting nanostructure

Әдебиет тізімі

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