Email this article Perspectives of electron-beam and ion-beam lithography development in Russia
- Authors: Zaitsev S.I.1, Irzhak D.V.1, Il’in A.I.1, Knyazev M.A.1, Roshchupkin D.V.1, Grachev V.P.2, Kurbatov V.G.2, Malkov G.V.2
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Affiliations:
- Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
- Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
- Issue: Vol 54, No 4 (2025)
- Pages: 281-290
- Section: ЛИТОГРАФИЯ
- URL: https://journals.rcsi.science/0544-1269/article/view/309018
- DOI: https://doi.org/10.31857/S0544126925040024
- EDN: https://elibrary.ru/qgohjo
- ID: 309018
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Abstract
The development of national resists for electron-beam and ion-beam lithography processes is reviewed. Positive resists based on polymethyl methacrylate allow to create nanoscale structures. Moreover, the possibility of using a combination of the created resists as bilayer resist is demonstrated. The perspectives of the development of national processes of electron-beam and ion-beam lithography are also demonstrated. At the present moment own national technological processes of electron-beam and ion-beam lithography are at the stage of demonstrators. In the near future, national electron-beam and ion-beam lithography devices will be developed. It will take significantly more time to organize production of national ion-beam lithography equipment.
About the authors
S. I. Zaitsev
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
D. V. Irzhak
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
A. I. Il’in
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
M. A. Knyazev
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
D. V. Roshchupkin
Institute of Microelectronics Technology and High Purity Materials Russian Academy of Sciences
Email: rochtch@iptm.ru
Moscow, Russia
V. P. Grachev
Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
Email: rochtch@iptm.ru
V. G. Kurbatov
Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
Email: rochtch@iptm.ru
G. V. Malkov
Federalo Research Center of Problems of Chemical Physics and Medical Chemistry RAS
Author for correspondence.
Email: rochtch@iptm.ru
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