A Study of Electronic Structure of Diethyldiphenylsilane by X-Ray Emission Spectroscopy and Density Functional Theory Methods


如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

X-Ray spectroscopy and DFT study of the electronic structure and chemical bonds of the silicon atom and its surrounding in the molecule of (HC=C)2SiPh2 has been performed. The X-ray emission Si Kβ1 spectrum has been registered and the electronic structure of diethynyldiphenylsilane and C2H2 has been simulated. The valence bands electronic states density distribution for the silicon atom and the carbon atoms of the phenyl and ethynyl groups has been obtained. The theoretical results are in good agreement with the experimental ones, allowing detailed description of the mechanism of the electronic structure formation of the valence bond in (HC≡C)2SiPh2.

作者简介

T. Danilenko

Research Institute of Physics

编辑信件的主要联系方式.
Email: tdanil1982@yandex.ru
俄罗斯联邦, Rostov-on-Don, 344090

M. Tatevosyan

Research Institute of Physics

Email: tdanil1982@yandex.ru
俄罗斯联邦, Rostov-on-Don, 344090

V. Vlasenko

Research Institute of Physics

Email: tdanil1982@yandex.ru
俄罗斯联邦, Rostov-on-Don, 344090


版权所有 © Pleiades Publishing, Ltd., 2019
##common.cookie##