A Study of Electronic Structure of Diethyldiphenylsilane by X-Ray Emission Spectroscopy and Density Functional Theory Methods
- Авторы: Danilenko T.1, Tatevosyan M.1, Vlasenko V.1
-
Учреждения:
- Research Institute of Physics
- Выпуск: Том 89, № 11 (2019)
- Страницы: 2224-2228
- Раздел: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/223156
- DOI: https://doi.org/10.1134/S1070363219110100
- ID: 223156
Цитировать
Аннотация
X-Ray spectroscopy and DFT study of the electronic structure and chemical bonds of the silicon atom and its surrounding in the molecule of (HC=C)2SiPh2 has been performed. The X-ray emission Si Kβ1 spectrum has been registered and the electronic structure of diethynyldiphenylsilane and C2H2 has been simulated. The valence bands electronic states density distribution for the silicon atom and the carbon atoms of the phenyl and ethynyl groups has been obtained. The theoretical results are in good agreement with the experimental ones, allowing detailed description of the mechanism of the electronic structure formation of the valence bond in (HC≡C)2SiPh2.
Об авторах
T. Danilenko
Research Institute of Physics
Автор, ответственный за переписку.
Email: tdanil1982@yandex.ru
Россия, Rostov-on-Don, 344090
M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
Россия, Rostov-on-Don, 344090
V. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
Россия, Rostov-on-Don, 344090