A Study of Electronic Structure of Diethyldiphenylsilane by X-Ray Emission Spectroscopy and Density Functional Theory Methods
- Authors: Danilenko T.N.1, Tatevosyan M.M.1, Vlasenko V.G.1
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Affiliations:
- Research Institute of Physics
- Issue: Vol 89, No 11 (2019)
- Pages: 2224-2228
- Section: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/223156
- DOI: https://doi.org/10.1134/S1070363219110100
- ID: 223156
Cite item
Abstract
X-Ray spectroscopy and DFT study of the electronic structure and chemical bonds of the silicon atom and its surrounding in the molecule of (HC=C)2SiPh2 has been performed. The X-ray emission Si Kβ1 spectrum has been registered and the electronic structure of diethynyldiphenylsilane and C2H2 has been simulated. The valence bands electronic states density distribution for the silicon atom and the carbon atoms of the phenyl and ethynyl groups has been obtained. The theoretical results are in good agreement with the experimental ones, allowing detailed description of the mechanism of the electronic structure formation of the valence bond in (HC≡C)2SiPh2.
About the authors
T. N. Danilenko
Research Institute of Physics
Author for correspondence.
Email: tdanil1982@yandex.ru
Russian Federation, Rostov-on-Don, 344090
M. M. Tatevosyan
Research Institute of Physics
Email: tdanil1982@yandex.ru
Russian Federation, Rostov-on-Don, 344090
V. G. Vlasenko
Research Institute of Physics
Email: tdanil1982@yandex.ru
Russian Federation, Rostov-on-Don, 344090