Formation of nanosized oxide films via thermal oxidation of Co3O4/InP heterostructures
- 作者: Tomina E.1, Mittova I.1, Samsonov A.1, Sladkopevtsev B.1, Zelenina L.1, Baranova V.1
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隶属关系:
- Voronezh State University
- 期: 卷 87, 编号 1 (2017)
- 页面: 8-12
- 栏目: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/217778
- DOI: https://doi.org/10.1134/S1070363217010029
- ID: 217778
如何引用文章
详细
Modification of InP film with magnetron-deposited 30 nm nanolayer of Co3O4 has resulted in the transit mechanism of thermal oxidation of the semiconductor and formation of nanosized oxide-phosphate films. Efficient transit interactions of Co3O4 with the semiconductor due to fast chemical binding of indium has led to the suppression of its diffusion inside the films. Secondary interactions of the oxides result in the formation of phosphate scaffold in the inner film regions, whereas the surface layer contains cobalt and indium oxides.
作者简介
E. Tomina
Voronezh State University
编辑信件的主要联系方式.
Email: tomina-e-v@yandex.ru
俄罗斯联邦, Universitetskaya pl. 1, Voronezh, 394018
I. Mittova
Voronezh State University
Email: tomina-e-v@yandex.ru
俄罗斯联邦, Universitetskaya pl. 1, Voronezh, 394018
A. Samsonov
Voronezh State University
Email: tomina-e-v@yandex.ru
俄罗斯联邦, Universitetskaya pl. 1, Voronezh, 394018
B. Sladkopevtsev
Voronezh State University
Email: tomina-e-v@yandex.ru
俄罗斯联邦, Universitetskaya pl. 1, Voronezh, 394018
L. Zelenina
Voronezh State University
Email: tomina-e-v@yandex.ru
俄罗斯联邦, Universitetskaya pl. 1, Voronezh, 394018
V. Baranova
Voronezh State University
Email: tomina-e-v@yandex.ru
俄罗斯联邦, Universitetskaya pl. 1, Voronezh, 394018
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