Formation of nanosized oxide films via thermal oxidation of Co3O4/InP heterostructures
- Autores: Tomina E.1, Mittova I.1, Samsonov A.1, Sladkopevtsev B.1, Zelenina L.1, Baranova V.1
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Afiliações:
- Voronezh State University
- Edição: Volume 87, Nº 1 (2017)
- Páginas: 8-12
- Seção: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/217778
- DOI: https://doi.org/10.1134/S1070363217010029
- ID: 217778
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Resumo
Modification of InP film with magnetron-deposited 30 nm nanolayer of Co3O4 has resulted in the transit mechanism of thermal oxidation of the semiconductor and formation of nanosized oxide-phosphate films. Efficient transit interactions of Co3O4 with the semiconductor due to fast chemical binding of indium has led to the suppression of its diffusion inside the films. Secondary interactions of the oxides result in the formation of phosphate scaffold in the inner film regions, whereas the surface layer contains cobalt and indium oxides.
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Sobre autores
E. Tomina
Voronezh State University
Autor responsável pela correspondência
Email: tomina-e-v@yandex.ru
Rússia, Universitetskaya pl. 1, Voronezh, 394018
I. Mittova
Voronezh State University
Email: tomina-e-v@yandex.ru
Rússia, Universitetskaya pl. 1, Voronezh, 394018
A. Samsonov
Voronezh State University
Email: tomina-e-v@yandex.ru
Rússia, Universitetskaya pl. 1, Voronezh, 394018
B. Sladkopevtsev
Voronezh State University
Email: tomina-e-v@yandex.ru
Rússia, Universitetskaya pl. 1, Voronezh, 394018
L. Zelenina
Voronezh State University
Email: tomina-e-v@yandex.ru
Rússia, Universitetskaya pl. 1, Voronezh, 394018
V. Baranova
Voronezh State University
Email: tomina-e-v@yandex.ru
Rússia, Universitetskaya pl. 1, Voronezh, 394018
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