Formation of nanosized oxide films via thermal oxidation of Co3O4/InP heterostructures
- Authors: Tomina E.V.1, Mittova I.Y.1, Samsonov A.A.1, Sladkopevtsev B.V.1, Zelenina L.S.1, Baranova V.A.1
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Affiliations:
- Voronezh State University
- Issue: Vol 87, No 1 (2017)
- Pages: 8-12
- Section: Article
- URL: https://journals.rcsi.science/1070-3632/article/view/217778
- DOI: https://doi.org/10.1134/S1070363217010029
- ID: 217778
Cite item
Abstract
Modification of InP film with magnetron-deposited 30 nm nanolayer of Co3O4 has resulted in the transit mechanism of thermal oxidation of the semiconductor and formation of nanosized oxide-phosphate films. Efficient transit interactions of Co3O4 with the semiconductor due to fast chemical binding of indium has led to the suppression of its diffusion inside the films. Secondary interactions of the oxides result in the formation of phosphate scaffold in the inner film regions, whereas the surface layer contains cobalt and indium oxides.
About the authors
E. V. Tomina
Voronezh State University
Author for correspondence.
Email: tomina-e-v@yandex.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018
I. Ya. Mittova
Voronezh State University
Email: tomina-e-v@yandex.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018
A. A. Samsonov
Voronezh State University
Email: tomina-e-v@yandex.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018
B. V. Sladkopevtsev
Voronezh State University
Email: tomina-e-v@yandex.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018
L. S. Zelenina
Voronezh State University
Email: tomina-e-v@yandex.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018
V. A. Baranova
Voronezh State University
Email: tomina-e-v@yandex.ru
Russian Federation, Universitetskaya pl. 1, Voronezh, 394018