Control of the Power Semiconductor Thermal Mode Involving the Concept of Transient Thermal Impedance
- Авторлар: Ershov A.B.1, Khorolsky V.Y.1, Atanov I.V.1, Efanov A.V.1
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Мекемелер:
- Stavropol State Agrarian University
- Шығарылым: Том 90, № 3 (2019)
- Беттер: 199-203
- Бөлім: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231536
- DOI: https://doi.org/10.3103/S1068371219030088
- ID: 231536
Дәйексөз келтіру
Аннотация
The problems of providing thermal stability of the power semiconductors under the effect of dramatic dynamic current overloading were considered. A new method was proposed of intelligent thermal protection of power semiconductors that is based on the application of the equivalent thermal time constant of the power device physical structure determined by the transition function of the thermosensitive parameter.
Авторлар туралы
A. Ershov
Stavropol State Agrarian University
Хат алмасуға жауапты Автор.
Email: journal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
V. Khorolsky
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
I. Atanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
A. Efanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Ресей, Stavropol, 355017
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