Control of the Power Semiconductor Thermal Mode Involving the Concept of Transient Thermal Impedance
- Авторы: Ershov A.B.1, Khorolsky V.Y.1, Atanov I.V.1, Efanov A.V.1
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Учреждения:
- Stavropol State Agrarian University
- Выпуск: Том 90, № 3 (2019)
- Страницы: 199-203
- Раздел: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231536
- DOI: https://doi.org/10.3103/S1068371219030088
- ID: 231536
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Аннотация
The problems of providing thermal stability of the power semiconductors under the effect of dramatic dynamic current overloading were considered. A new method was proposed of intelligent thermal protection of power semiconductors that is based on the application of the equivalent thermal time constant of the power device physical structure determined by the transition function of the thermosensitive parameter.
Об авторах
A. Ershov
Stavropol State Agrarian University
Автор, ответственный за переписку.
Email: journal-elektrotechnika@mail.ru
Россия, Stavropol, 355017
V. Khorolsky
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Россия, Stavropol, 355017
I. Atanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Россия, Stavropol, 355017
A. Efanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Россия, Stavropol, 355017
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