Control of the Power Semiconductor Thermal Mode Involving the Concept of Transient Thermal Impedance


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The problems of providing thermal stability of the power semiconductors under the effect of dramatic dynamic current overloading were considered. A new method was proposed of intelligent thermal protection of power semiconductors that is based on the application of the equivalent thermal time constant of the power device physical structure determined by the transition function of the thermosensitive parameter.

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A. Ershov

Stavropol State Agrarian University

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Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017

V. Khorolsky

Stavropol State Agrarian University

Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017

I. Atanov

Stavropol State Agrarian University

Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017

A. Efanov

Stavropol State Agrarian University

Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017

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