Control of the Power Semiconductor Thermal Mode Involving the Concept of Transient Thermal Impedance
- 作者: Ershov A.B.1, Khorolsky V.Y.1, Atanov I.V.1, Efanov A.V.1
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隶属关系:
- Stavropol State Agrarian University
- 期: 卷 90, 编号 3 (2019)
- 页面: 199-203
- 栏目: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231536
- DOI: https://doi.org/10.3103/S1068371219030088
- ID: 231536
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详细
The problems of providing thermal stability of the power semiconductors under the effect of dramatic dynamic current overloading were considered. A new method was proposed of intelligent thermal protection of power semiconductors that is based on the application of the equivalent thermal time constant of the power device physical structure determined by the transition function of the thermosensitive parameter.
作者简介
A. Ershov
Stavropol State Agrarian University
编辑信件的主要联系方式.
Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017
V. Khorolsky
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017
I. Atanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017
A. Efanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
俄罗斯联邦, Stavropol, 355017
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