Control of the Power Semiconductor Thermal Mode Involving the Concept of Transient Thermal Impedance
- Autores: Ershov A.B.1, Khorolsky V.Y.1, Atanov I.V.1, Efanov A.V.1
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Afiliações:
- Stavropol State Agrarian University
- Edição: Volume 90, Nº 3 (2019)
- Páginas: 199-203
- Seção: Article
- URL: https://journals.rcsi.science/1068-3712/article/view/231536
- DOI: https://doi.org/10.3103/S1068371219030088
- ID: 231536
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Resumo
The problems of providing thermal stability of the power semiconductors under the effect of dramatic dynamic current overloading were considered. A new method was proposed of intelligent thermal protection of power semiconductors that is based on the application of the equivalent thermal time constant of the power device physical structure determined by the transition function of the thermosensitive parameter.
Sobre autores
A. Ershov
Stavropol State Agrarian University
Autor responsável pela correspondência
Email: journal-elektrotechnika@mail.ru
Rússia, Stavropol, 355017
V. Khorolsky
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Rússia, Stavropol, 355017
I. Atanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Rússia, Stavropol, 355017
A. Efanov
Stavropol State Agrarian University
Email: journal-elektrotechnika@mail.ru
Rússia, Stavropol, 355017
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