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期
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作者
卷 64, 编号 11 (2019)
Low Elevation Angle Estimation Using an Iterative Array Processing Method
Hossein Darvishi , Mohammad Ali Sebt
PDF
(Eng)
卷 63, 编号 9 (2018)
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer
Sednev M., Boltar K., Irodov N., Demidov S.
PDF
(Eng)
卷 63, 编号 3 (2018)
Long-Term Stability of a 640 × 512 InSb Focal Plane Array with a Pitch of 15 μm
Vlasov P.
PDF
(Eng)
卷 61, 编号 10 (2016)
Investigation of 1024 × 10 multirow focal plane arrays based on the solid solution of mercury–cadmium–telluride
Solyakov V., Bochkov V., Drazhnikov B., Kuznetsov P., Kozlov K.
PDF
(Eng)
卷 63, 编号 9 (2018)
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N., Boltar K., Nikonov A., Egorov A.
PDF
(Eng)
卷 61, 编号 10 (2016)
Solid state photoelectronics: the current state and new prospects
Burlakov I., Dirochka A., Korneeva M., Ponomarenko V., Filachev A.
PDF
(Eng)
卷 61, 编号 8 (2016)
Double-plane pattern enhancement of rectangular slotted waveguide antennas using slotted concave surfaces
Harmouch A., Haddad H., El-Sayed Ahmad A.
PDF
(Eng)
卷 61, 编号 4 (2016)
Adaptive compensation for interference-source signals in the radar system with a phased array antenna under completely polarized reception
Agapov O.
PDF
(Eng)
卷 63, 编号 10 (2018)
Tapered Fiber Array for Free Space Optical Communication
Qinggui H., Yining M.
PDF
(Eng)
卷 61, 编号 3 (2016)
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures
Iakovleva N., Boltar K., Sednev M., Patrashin A., Irodov N.
PDF
(Eng)
卷 62, 编号 9 (2017)
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging
Iakovleva N., Boltar K., Sednev M., Nikonov A.
PDF
(Eng)
卷 61, 编号 3 (2016)
Analytical model used to calculate focal-plane-array parameters
Patrashin A., Burlakov I., Korneeva M., Shabarov V.
PDF
(Eng)
卷 62, 编号 3 (2017)
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate
Burlakov I., Boltar K., Vlasov P., Lopukhin A., Toropov A., Zhuravlev K., Fadeev V.
PDF
(Eng)
卷 62, 编号 3 (2017)
A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm
Borodin D., Osipov Y., Vasil’ev V.
PDF
(Eng)
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