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卷 62, 编号 3 (2017)
Analysis of the nBn-type barrier structures for infrared photodiode detectors
Voitsekhovskii A., Gorn D.
PDF
(Eng)
卷 62, 编号 3 (2017)
A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm
Borodin D., Osipov Y., Vasil’ev V.
PDF
(Eng)
卷 64, 编号 9 (2019)
Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs
Iakovleva N., Nikonov A., Boltar K., Sednev M.
PDF
(Eng)
卷 62, 编号 3 (2017)
Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector
Baliev D., Boltar K.
PDF
(Eng)
卷 64, 编号 9 (2019)
Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range
Burlakov I., Kuznetsov P., Moshchev I., Boltar K., Yakovleva N.
PDF
(Eng)
卷 61, 编号 10 (2016)
Advantages of solid-state photodetectors for a spectral interval of 1.4–1.7 μm in night-vision devices
Gusarova N., Koshchavtsev N., Popov S.
PDF
(Eng)
卷 63, 编号 9 (2018)
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N., Boltar K., Nikonov A., Egorov A.
PDF
(Eng)
卷 61, 编号 10 (2016)
Comparative analysis of readout large-scale integrated circuits with an analog-to-digital converter in the cell for a photodetector of the far infrared range
Kuznetsov P., Moshchev I.
PDF
(Eng)
卷 63, 编号 9 (2018)
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer
Sednev M., Boltar K., Irodov N., Demidov S.
PDF
(Eng)
卷 61, 编号 10 (2016)
Investigation of 1024 × 10 multirow focal plane arrays based on the solid solution of mercury–cadmium–telluride
Solyakov V., Bochkov V., Drazhnikov B., Kuznetsov P., Kozlov K.
PDF
(Eng)
卷 62, 编号 9 (2017)
Selective UV photodetectors based on the metal–AlGaN Schottky barrier
Tarasov S., Lamkin I., Mikhailov I., Evseenkov A., Solomonov A.
PDF
(Eng)
卷 61, 编号 3 (2016)
320 × 256 avalanche array photodetector on the basis of ternary alloys of the A3B5 group with an InGaAs absorbing layer and an InAlAs barrier layer
Iakovleva N., Boltar K., Sedneva M., Lopukhin A., Korotaev E.
PDF
(Eng)
卷 62, 编号 9 (2017)
Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging
Iakovleva N., Boltar K., Sednev M., Nikonov A.
PDF
(Eng)
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