作者的详细信息
Vasil’ev, V.
期 | 栏目 | 标题 | 文件 |
卷 62, 编号 3 (2017) | Articles from the Russian Journal Prikladnaya Fizika | A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm | |
卷 63, 编号 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator | |
卷 64, 编号 9 (2019) | Article | A Megapixel Matrix Photodetector of the Middle Infrared Range | |
卷 64, 编号 9 (2019) | Article | Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns |