作者的详细信息
Nesmelov, S. N.
期 | 栏目 | 标题 | 文件 |
卷 63, 编号 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator | |
卷 63, 编号 9 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range | |
卷 64, 编号 3 (2019) | Article | Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy |