作者的详细信息
Irodov, N.
期 | 栏目 | 标题 | 文件 |
卷 61, 编号 3 (2016) | Articles from the Russian Journal Prikladnaya Fizika | Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures | |
卷 61, 编号 10 (2016) | Articles from the Russian Journal Prikladnaya Fizika | Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure | |
卷 63, 编号 9 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer | |
卷 64, 编号 3 (2019) | Article | Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm |