Author Details
Irodov, N.
Issue | Section | Title | File |
Vol 61, No 3 (2016) | Articles from the Russian Journal Prikladnaya Fizika | Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures | |
Vol 61, No 10 (2016) | Articles from the Russian Journal Prikladnaya Fizika | Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure | |
Vol 63, No 9 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer | |
Vol 64, No 3 (2019) | Article | Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm |