作者的详细信息
Ladugin, M. A.
期 | 栏目 | 标题 | 文件 |
卷 62, 编号 3 (2017) | Articles from the Russian Journal Prikladnaya Fizika | Epitaxial structures for InGaAs/InP avalanche photodiodes | |
卷 64, 编号 3 (2019) | Article | Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm |