作者的详细信息
Chinareva, I. V.
期 | 栏目 | 标题 | 文件 |
卷 62, 编号 3 (2017) | Articles from the Russian Journal Prikladnaya Fizika | Epitaxial structures for InGaAs/InP avalanche photodiodes | |
卷 62, 编号 9 (2017) | Articles from the Russian Journal Uspekhi Prikladnoi Fiziki | Formation of guard ring of avalanche photodiode based on the InGaAs/InP heterostructure | |
卷 63, 编号 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures | |
卷 64, 编号 3 (2019) | Article | Effect of the Spread of the Depths of p–n Junction on the Parameters of InGaAs/InP Avalanche Photodiodes |