Single-domain nickel films for production of graphene
- 作者: Luzanov V.1, Kotelyanskii I.1, Shustin E.1,2
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Moscow Engineering Physics Institute
- 期: 卷 62, 编号 7 (2017)
- 页面: 820-821
- 栏目: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/198619
- DOI: https://doi.org/10.1134/S1064226917060134
- ID: 198619
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详细
A technique for depositing single-domain heteroepitaxial nickel films onto sapphire substrates is presented. It is demonstrated that high-temperature annealing of these substrates in oxygen alters their near-surface layer in a way that enables the growth of single-domain heteroepitaxial (111) Ni films on a (0001) Al2O3 substrate. Single-domain heteroepitaxial (111) Ni films on a (0001) Al2O3 substrate, which can be taken as the basis for a technique for fabrication of large-area single-crystalline graphene films, were synthesized for the first time.
作者简介
V. Luzanov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
编辑信件的主要联系方式.
Email: valery@luzanov.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
I. Kotelyanskii
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: valery@luzanov.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
E. Shustin
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch); Moscow Engineering Physics Institute
Email: valery@luzanov.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190; Moscow, 115409
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