Отправить статью по E-mail Single-domain nickel films for production of graphene
- Авторы: Luzanov V.A.1, Kotelyanskii I.M.1, Shustin E.G.1,2
-
Учреждения:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Moscow Engineering Physics Institute
- Выпуск: Том 62, № 7 (2017)
- Страницы: 820-821
- Раздел: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/198619
- DOI: https://doi.org/10.1134/S1064226917060134
- ID: 198619
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
A technique for depositing single-domain heteroepitaxial nickel films onto sapphire substrates is presented. It is demonstrated that high-temperature annealing of these substrates in oxygen alters their near-surface layer in a way that enables the growth of single-domain heteroepitaxial (111) Ni films on a (0001) Al2O3 substrate. Single-domain heteroepitaxial (111) Ni films on a (0001) Al2O3 substrate, which can be taken as the basis for a technique for fabrication of large-area single-crystalline graphene films, were synthesized for the first time.
Об авторах
V. Luzanov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Автор, ответственный за переписку.
Email: valery@luzanov.ru
Россия, Fryazino, Moscow oblast, 141190
I. Kotelyanskii
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: valery@luzanov.ru
Россия, Fryazino, Moscow oblast, 141190
E. Shustin
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch); Moscow Engineering Physics Institute
Email: valery@luzanov.ru
Россия, Fryazino, Moscow oblast, 141190; Moscow, 115409
Дополнительные файлы
