Email this article Single-domain nickel films for production of graphene
- Authors: Luzanov V.A.1, Kotelyanskii I.M.1, Shustin E.G.1,2
-
Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Moscow Engineering Physics Institute
- Issue: Vol 62, No 7 (2017)
- Pages: 820-821
- Section: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/198619
- DOI: https://doi.org/10.1134/S1064226917060134
- ID: 198619
Cite item
Open Access
Access granted
Subscription Access
Abstract
A technique for depositing single-domain heteroepitaxial nickel films onto sapphire substrates is presented. It is demonstrated that high-temperature annealing of these substrates in oxygen alters their near-surface layer in a way that enables the growth of single-domain heteroepitaxial (111) Ni films on a (0001) Al2O3 substrate. Single-domain heteroepitaxial (111) Ni films on a (0001) Al2O3 substrate, which can be taken as the basis for a technique for fabrication of large-area single-crystalline graphene films, were synthesized for the first time.
About the authors
V. A. Luzanov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Author for correspondence.
Email: valery@luzanov.ru
Russian Federation, Fryazino, Moscow oblast, 141190
I. M. Kotelyanskii
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: valery@luzanov.ru
Russian Federation, Fryazino, Moscow oblast, 141190
E. G. Shustin
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch); Moscow Engineering Physics Institute
Email: valery@luzanov.ru
Russian Federation, Fryazino, Moscow oblast, 141190; Moscow, 115409
