Plasma technologies for material processing in nanoelectronics: Problems and solutions
- 作者: Shustin E.1,2
-
隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Moscow Engineering Physics Institute (National Research Nuclear University)
- 期: 卷 62, 编号 5 (2017)
- 页面: 454-465
- 栏目: Review
- URL: https://journals.rcsi.science/1064-2269/article/view/198285
- DOI: https://doi.org/10.1134/S106422691704012X
- ID: 198285
如何引用文章
详细
The review considers plasma-processing technologies used in solid-state electronics, both widely used and ones, which do not found yet industrial applications. Several from them are developed specifically for creating nanoelectronic devices. Tendencies toward an increase in the working rate and memory volume and a decrease in the sizes of telecommunication systems necessitate the development of electronic devices based on new principles and, hence, the corresponding technologies for implementation. Physical problems that impede the application of conventional methods in new problems are analyzed, and possible solutions are proposed.
作者简介
E. Shustin
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch); Moscow Engineering Physics Institute (National Research Nuclear University)
编辑信件的主要联系方式.
Email: shustin@ms.ire.rssi.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190; Moscow, 115409