Informaçao sobre o Autor
Nesmelov, S.
Edição | Seção | Título | Arquivo |
Volume 63, Nº 3 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator | |
Volume 63, Nº 9 (2018) | Articles from the Russian Journal Prikladnaya Fizika | Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range | |
Volume 64, Nº 3 (2019) | Article | Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy |