Мақаланы E-mail арқылы жіберу Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm
- Авторлар: Boltar K.1,2, Irodov N.1, Sednev M.1, Marmalyuk A.3, Ladugin M.1, Ryaboshtan Y.3
-
Мекемелер:
- Orion R&P Association
- Moscow Institute of Physics and Technology (State University)
- Stel’makh Research Institute “Polyus”
- Шығарылым: Том 64, № 3 (2019)
- Беттер: 283-285
- Бөлім: Article
- URL: https://journals.rcsi.science/1064-2269/article/view/200492
- DOI: https://doi.org/10.1134/S1064226919030021
- ID: 200492
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
I–V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of epitaxial structures with the In0.67Ga0.33As absorbing layer doped with Zn on the InP substrates are studied. The photodiodes are fabricated using the mesatechnology. The long-wavelength boundary of the spectral photosensitivity of diodes measured at half-maximum is 2.06 μm at room temperature. Photosensitivity spectra are studied in a temperature interval of 230–300 K.
Негізгі сөздер
Авторлар туралы
K. Boltar
Orion R&P Association; Moscow Institute of Physics and Technology (State University)
Хат алмасуға жауапты Автор.
Email: orion@orion-ir.ru
Ресей, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. Irodov
Orion R&P Association
Email: bereg@niipolyus.ru
Ресей, Moscow, 111538
M. Sednev
Orion R&P Association
Email: bereg@niipolyus.ru
Ресей, Moscow, 111538
A. Marmalyuk
Stel’makh Research Institute “Polyus”
Хат алмасуға жауапты Автор.
Email: bereg@niipolyus.ru
Ресей, Moscow, 117342
M. Ladugin
Orion R&P Association
Email: bereg@niipolyus.ru
Ресей, Moscow, 111538
Yu. Ryaboshtan
Stel’makh Research Institute “Polyus”
Email: bereg@niipolyus.ru
Ресей, Moscow, 117342
