Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling

Аннотация

Photoresistors with thermoelectric cooling of photosensitive elements are developed in the topology of the five-digit Gray code using the Cd_xHg_1–xTe heteroepitaxial structures produced with the aid of molecular-beam epitaxy. The photoresistors can be used to detect pulsed laser radiation with a wavelength of 10.6 μm. The dependence of the signal-to-noise ratio on the composition of the narrow-band-gap working layer of the epitaxial structure and the structure of the photoresistor is studied.