Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling

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Abstract

Photoresistors with thermoelectric cooling of photosensitive elements are developed in the topology of the five-digit Gray code using the CdxHg1–xTe heteroepitaxial structures produced with the aid of molecular-beam epitaxy. The photoresistors can be used to detect pulsed laser radiation with a wavelength of 10.6 μm. The dependence of the signal-to-noise ratio on the composition of the narrow-band-gap working layer of the epitaxial structure and the structure of the photoresistor is studied.

About the authors

A. V. Filatov

JSC “Shvabe-Photosystems,”

Author for correspondence.
Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545

V. V. Karpov

JSC “Shvabe-Photosystems,”

Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545

E. V. Susov

JSC “Shvabe-Photosystems,”

Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545

A. A. Gribanov

JSC “Shvabe-Photosystems,”

Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545

N. S. Kuznetsov

JSC “Shvabe-Photosystems,”

Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545

V. I. Petrenko

JSC “Shvabe-Photosystems,”

Email: co-ckb@mail.ru
Russian Federation, Dnepropetrovskii proezd 4a, Moscow, 117545


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