Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication
- Authors: Burlakov I.D.1,2, Drugova A.A.3, Kholodnov V.A.3
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Affiliations:
- Orion Research and Production Association
- Moscow Institute of Radio Electronics and Automation
- Kotel’nikov Institute of Radio Engineering and Electronics
- Issue: Vol 61, No 10 (2016)
- Pages: 1200-1204
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/197473
- DOI: https://doi.org/10.1134/S1064226916100065
- ID: 197473
Cite item
Abstract
Principles of an analytical system of physical design of avalanche heterophotodiodes with separate regions of absorption and multiplication (AHPD with SRAM) are presented. The system is based on analytical expressions for the field of the avalanche breakdown of the p–n heterostructure and the interband tunnel current in it. This current determines the minimum noise level in the AHPD with SRAM based on direct band semiconductors. The considered method strongly facilitates optimization of the doping levels of the heterostructure layers and their thicknesses. In addition, it gives significantly more pronounced physical content to the optimization process.
About the authors
I. D. Burlakov
Orion Research and Production Association; Moscow Institute of Radio Electronics and Automation
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, ul. Kosinskaya 9, Moscow, 111538; pr. Vernadskogo 78, Moscow, 119454
A. A. Drugova
Kotel’nikov Institute of Radio Engineering and Electronics
Email: orion@orion-ir.ru
Russian Federation, ul. Mokhovaya 11, Moscow, 125009
V. A. Kholodnov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: orion@orion-ir.ru
Russian Federation, ul. Mokhovaya 11, Moscow, 125009