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Effect of the Spread of the Depths of pn Junction on the Parameters of InGaAs/InP Avalanche Photodiodes
Budtolaev A.K., Khakuashev P.E., Chinareva I.V.
Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures
Budtolaev A.K., Kravchenko N.V., Khakuashev P.E., Chinareva I.V.
Epitaxial structures for InGaAs/InP avalanche photodiodes
Budtolaev A.K., Khakuashev P.E., Chinareva I.V., Gorlachuk P.V., Ladugin M.A., Marmaluk A.A., Ryaboshtan Y.L., Yarotskaya I.V.
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