Email this article Growth Features of Thin Epitaxial Magnesium Oxide Films on Sapphire
- Authors: Luzanov V.A.1
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Affiliations:
- Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Issue: Vol 64, No 7 (2019)
- Pages: 720-721
- Section: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200935
- DOI: https://doi.org/10.1134/S1064226919070118
- ID: 200935
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Abstract
Abstract—Epitaxial (111) MgO films on sapphire with (0001) orientation were grown by high-frequency magnetron reactive sputtering. The X-ray structural analysis of the films obtained in combination with layer-by-layer plasma etching showed the presence of a thin transition layer with lattice parameters corresponding to the cubic structure of MgO with signs of rhombohedral strain.
About the authors
V. A. Luzanov
Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Author for correspondence.
Email: valery@luzanov.ru
Russian Federation, Fryazino, Moscow oblast, 141190
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