电邮这篇文章 Growth Features of Thin Epitaxial Magnesium Oxide Films on Sapphire
- 作者: Luzanov V.1
-
隶属关系:
- Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- 期: 卷 64, 编号 7 (2019)
- 页面: 720-721
- 栏目: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200935
- DOI: https://doi.org/10.1134/S1064226919070118
- ID: 200935
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详细
Abstract—Epitaxial (111) MgO films on sapphire with (0001) orientation were grown by high-frequency magnetron reactive sputtering. The X-ray structural analysis of the films obtained in combination with layer-by-layer plasma etching showed the presence of a thin transition layer with lattice parameters corresponding to the cubic structure of MgO with signs of rhombohedral strain.
作者简介
V. Luzanov
Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: valery@luzanov.ru
俄罗斯联邦, Fryazino, Moscow oblast, 141190
