Отправить статью по E-mail Growth Features of Thin Epitaxial Magnesium Oxide Films on Sapphire
- Авторы: Luzanov V.A.1
-
Учреждения:
- Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Выпуск: Том 64, № 7 (2019)
- Страницы: 720-721
- Раздел: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200935
- DOI: https://doi.org/10.1134/S1064226919070118
- ID: 200935
Цитировать
Открытый доступ
Доступ предоставлен
Только для подписчиков
Аннотация
Abstract—Epitaxial (111) MgO films on sapphire with (0001) orientation were grown by high-frequency magnetron reactive sputtering. The X-ray structural analysis of the films obtained in combination with layer-by-layer plasma etching showed the presence of a thin transition layer with lattice parameters corresponding to the cubic structure of MgO with signs of rhombohedral strain.
Об авторах
V. Luzanov
Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: valery@luzanov.ru
Россия, Fryazino, Moscow oblast, 141190
Дополнительные файлы
