Enviar artigo por via de e-mail Growth Features of Thin Epitaxial Magnesium Oxide Films on Sapphire
- Autores: Luzanov V.1
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Afiliações:
- Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Edição: Volume 64, Nº 7 (2019)
- Páginas: 720-721
- Seção: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200935
- DOI: https://doi.org/10.1134/S1064226919070118
- ID: 200935
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Resumo
Abstract—Epitaxial (111) MgO films on sapphire with (0001) orientation were grown by high-frequency magnetron reactive sputtering. The X-ray structural analysis of the films obtained in combination with layer-by-layer plasma etching showed the presence of a thin transition layer with lattice parameters corresponding to the cubic structure of MgO with signs of rhombohedral strain.
Sobre autores
V. Luzanov
Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Autor responsável pela correspondência
Email: valery@luzanov.ru
Rússia, Fryazino, Moscow oblast, 141190
