Мақаланы E-mail арқылы жіберу Growth Features of Thin Epitaxial Magnesium Oxide Films on Sapphire
- Авторлар: Luzanov V.A.1
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Мекемелер:
- Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
- Шығарылым: Том 64, № 7 (2019)
- Беттер: 720-721
- Бөлім: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200935
- DOI: https://doi.org/10.1134/S1064226919070118
- ID: 200935
Дәйексөз келтіру
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Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Abstract—Epitaxial (111) MgO films on sapphire with (0001) orientation were grown by high-frequency magnetron reactive sputtering. The X-ray structural analysis of the films obtained in combination with layer-by-layer plasma etching showed the presence of a thin transition layer with lattice parameters corresponding to the cubic structure of MgO with signs of rhombohedral strain.
Авторлар туралы
V. Luzanov
Fryazino Branch, Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: valery@luzanov.ru
Ресей, Fryazino, Moscow oblast, 141190
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