Short-Wave Infrared Camera with a Focal Plane Array Based on InGaAs/InP Heterostructures

Resumo

The results of the development and testing of a short-wave IR (0.9–1.7 μm) camera with the first Russian-produced 320 × 256 focal plane array (FPA) are detailed. This FPA was designed based on an InGaAs/InP heterostructure and has a pixel pitch of 30 μm and a suppressed temperature dependence of sensitivity. The primary components and parameters of the camera are discussed. Its advantages and possible applications both as a component of multispectral optoelectronic systems and as an independent device are reviewed.