Email this article Diamond-Like Carbon Films Obtained by the Method of High-Frequency Diode Sputtering
- Authors: Luzanov V.A.1, Vedeneev A.S.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Issue: Vol 63, No 9 (2018)
- Pages: 1068-1069
- Section: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200182
- DOI: https://doi.org/10.1134/S1064226918090139
- ID: 200182
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Abstract
Conditions for fabrication of diamond-like carbon films on the surface of oxidized single-crystalline silicon using the technique of high-frequency diode sputtering of graphite target are determined. It has been found that the deposited films have amorphous structure. The Raman spectroscopy technique has been used to show the presence of carbon phases with sp2- and sp3-hybridization, the ratio between which can be controlled by the growth conditions.
About the authors
V. A. Luzanov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Author for correspondence.
Email: valery@luzanov.ru
Russian Federation, Fryazino, Moscow oblast, 141190
A. S. Vedeneev
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: valery@luzanov.ru
Russian Federation, Fryazino, Moscow oblast, 141190
