Diamond-Like Carbon Films Obtained by the Method of High-Frequency Diode Sputtering
- Авторы: Luzanov V.1, Vedeneev A.1
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Учреждения:
- Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
- Выпуск: Том 63, № 9 (2018)
- Страницы: 1068-1069
- Раздел: Nanoelectronics
- URL: https://journals.rcsi.science/1064-2269/article/view/200182
- DOI: https://doi.org/10.1134/S1064226918090139
- ID: 200182
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Аннотация
Conditions for fabrication of diamond-like carbon films on the surface of oxidized single-crystalline silicon using the technique of high-frequency diode sputtering of graphite target are determined. It has been found that the deposited films have amorphous structure. The Raman spectroscopy technique has been used to show the presence of carbon phases with sp2- and sp3-hybridization, the ratio between which can be controlled by the growth conditions.
Об авторах
V. Luzanov
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Автор, ответственный за переписку.
Email: valery@luzanov.ru
Россия, Fryazino, Moscow oblast, 141190
A. Vedeneev
Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch)
Email: valery@luzanov.ru
Россия, Fryazino, Moscow oblast, 141190