Diamond-Like Carbon Films Obtained by the Method of High-Frequency Diode Sputtering

Аннотация

Conditions for fabrication of diamond-like carbon films on the surface of oxidized single-crystalline silicon using the technique of high-frequency diode sputtering of graphite target are determined. It has been found that the deposited films have amorphous structure. The Raman spectroscopy technique has been used to show the presence of carbon phases with sp²- and sp³-hybridization, the ratio between which can be controlled by the growth conditions.