Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

Resumo

SWIR ADP 320 × 256 FPAs based on p–i–n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n⁺ type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p–i–n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.