Email this article Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
- Authors: Volodin V.A.1,2, Gritsenko V.A.1,2,3, Chin A.4
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Affiliations:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- National Chao Tung University
- Issue: Vol 44, No 5 (2018)
- Pages: 424-427
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207649
- DOI: https://doi.org/10.1134/S1063785018050279
- ID: 207649
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Abstract
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
About the authors
V. A. Volodin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: volodin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. A. Gritsenko
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: volodin@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630090
A. Chin
National Chao Tung University
Email: volodin@isp.nsc.ru
Taiwan, Province of China, Hsinchu, Taiwan
