Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
- 作者: Volodin V.1,2, Gritsenko V.1,2,3, Chin A.4
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隶属关系:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- National Chao Tung University
- 期: 卷 44, 编号 5 (2018)
- 页面: 424-427
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207649
- DOI: https://doi.org/10.1134/S1063785018050279
- ID: 207649
如何引用文章
详细
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
作者简介
V. Volodin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: volodin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Gritsenko
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: volodin@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630090
A. Chin
National Chao Tung University
Email: volodin@isp.nsc.ru
台湾, Hsinchu, Taiwan