Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
- Авторлар: Volodin V.1,2, Gritsenko V.1,2,3, Chin A.4
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Мекемелер:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- National Chao Tung University
- Шығарылым: Том 44, № 5 (2018)
- Беттер: 424-427
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207649
- DOI: https://doi.org/10.1134/S1063785018050279
- ID: 207649
Дәйексөз келтіру
Аннотация
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
Авторлар туралы
V. Volodin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: volodin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
V. Gritsenko
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: volodin@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630090
A. Chin
National Chao Tung University
Email: volodin@isp.nsc.ru
Қытай республикасы, Hsinchu, Taiwan