Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
- Авторы: Volodin V.1,2, Gritsenko V.1,2,3, Chin A.4
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Учреждения:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- National Chao Tung University
- Выпуск: Том 44, № 5 (2018)
- Страницы: 424-427
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207649
- DOI: https://doi.org/10.1134/S1063785018050279
- ID: 207649
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Аннотация
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
Об авторах
V. Volodin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Автор, ответственный за переписку.
Email: volodin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090
V. Gritsenko
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: volodin@isp.nsc.ru
Россия, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630090
A. Chin
National Chao Tung University
Email: volodin@isp.nsc.ru
Тайвань, Hsinchu, Taiwan