Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
- Autores: Volodin V.1,2, Gritsenko V.1,2,3, Chin A.4
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Afiliações:
- Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- National Chao Tung University
- Edição: Volume 44, Nº 5 (2018)
- Páginas: 424-427
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/207649
- DOI: https://doi.org/10.1134/S1063785018050279
- ID: 207649
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Resumo
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are responsible for the memory effect in Si3N4.
Sobre autores
V. Volodin
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Autor responsável pela correspondência
Email: volodin@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090
V. Gritsenko
Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: volodin@isp.nsc.ru
Rússia, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630090
A. Chin
National Chao Tung University
Email: volodin@isp.nsc.ru
República da China, Hsinchu, Taiwan