Email this article The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values
- Authors: Sergeev V.A.1,2, Frolov I.V.1, Radaev O.A.1,2
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Affiliations:
- Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
- Ulyanovsk State Technical University
- Issue: Vol 43, No 2 (2017)
- Pages: 224-226
- Section: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203646
- DOI: https://doi.org/10.1134/S1063785017020250
- ID: 203646
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Abstract
It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures.. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.
About the authors
V. A. Sergeev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Russian Federation, Ulyanovsk, 432071; Ulyanovsk, 432027
I. V. Frolov
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
Author for correspondence.
Email: ilya-frolov88@mail.ru
Russian Federation, Ulyanovsk, 432071
O. A. Radaev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Russian Federation, Ulyanovsk, 432071; Ulyanovsk, 432027
