Enviar artigo por via de e-mail The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values
- Autores: Sergeev V.1,2, Frolov I.1, Radaev O.1,2
-
Afiliações:
- Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
- Ulyanovsk State Technical University
- Edição: Volume 43, Nº 2 (2017)
- Páginas: 224-226
- Seção: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203646
- DOI: https://doi.org/10.1134/S1063785017020250
- ID: 203646
Citar
Acesso aberto
Acesso está concedido
Somente assinantes
Resumo
It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures.. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.
Sobre autores
V. Sergeev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Rússia, Ulyanovsk, 432071; Ulyanovsk, 432027
I. Frolov
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
Autor responsável pela correspondência
Email: ilya-frolov88@mail.ru
Rússia, Ulyanovsk, 432071
O. Radaev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Rússia, Ulyanovsk, 432071; Ulyanovsk, 432027
