The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values
- 作者: Sergeev V.1,2, Frolov I.1, Radaev O.1,2
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隶属关系:
- Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
- Ulyanovsk State Technical University
- 期: 卷 43, 编号 2 (2017)
- 页面: 224-226
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203646
- DOI: https://doi.org/10.1134/S1063785017020250
- ID: 203646
如何引用文章
详细
It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures.. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.
作者简介
V. Sergeev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
俄罗斯联邦, Ulyanovsk, 432071; Ulyanovsk, 432027
I. Frolov
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
编辑信件的主要联系方式.
Email: ilya-frolov88@mail.ru
俄罗斯联邦, Ulyanovsk, 432071
O. Radaev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
俄罗斯联邦, Ulyanovsk, 432071; Ulyanovsk, 432027