Мақаланы E-mail арқылы жіберу The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values
- Авторлар: Sergeev V.1,2, Frolov I.1, Radaev O.1,2
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Мекемелер:
- Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
- Ulyanovsk State Technical University
- Шығарылым: Том 43, № 2 (2017)
- Беттер: 224-226
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203646
- DOI: https://doi.org/10.1134/S1063785017020250
- ID: 203646
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Аннотация
It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures.. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.
Авторлар туралы
V. Sergeev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Ресей, Ulyanovsk, 432071; Ulyanovsk, 432027
I. Frolov
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: ilya-frolov88@mail.ru
Ресей, Ulyanovsk, 432071
O. Radaev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Ресей, Ulyanovsk, 432071; Ulyanovsk, 432027
